A dissertation submitted in partial fulfillment of the requirements. Besides these established applications, zno and its ternary alloys are now also being considered as potential materials for. The wellaligned zno nanorods were synthesized on gan coated alum. Recently, an nznocspbbr3pgan selfpowered uv photodetector using a. Semiconductor materials and structures for power electronics. Engineering future light emitting diodes and photovoltaics. Dilute magnetic semiconductors based on gan and zno. Hybrid green leds based on n znoingangan multiquantumwells pgan c. Zno nanorods were well aligned and perpendicular to the gan substrate, and some of the samples were almost fully chemically etched into nanotubes.
The zno then served as a sacrificial release layer, allowing chemical liftoff of the gan from the cal 2 o 3 substrate via selective wet etching of the zno. Gan and znobased materials and devices springer series in materials science. The possible importance of zincoxidebased optoelectronic devices is. Novel process for direct bonding of gan onto glass.
Great efforts are being made on the wide bandgap materials as mandated by next generation device design and fabrications. Razeghi a acenter for quantum devices, department of electrical engineering and computer science, northwestern university, evanston, illinois, usa 60208. Fabrication and characterization of zno and gan devices for. These results could have important implications on the advancement of metalznobased electronic devices,5 plasmonic devices,6,7 and heterogeneous catalysts. Wp3 is dedicated to the synthesis, either by vacuum based methods cvd, ald, pvd or wetchemistry. Morphology control and electroluminescence of zno nanorodgan heterojunctions prepared using aqueous solution samdong lee, yoonseok kim, minsu yi, jaeyoung choi, and sangwoo kim, school of advanced materials and system engineering, kumoh national institute of technology. Gan and znobased materials and devices springer series in materials science pearton, stephen on. Again, zno owns a huge potentially commercial value due to its cheaper price, abundant resources in nature, environmentally friendly, simple fabrication processes and so on. Fabrication of zinc oxide nanorods based heterojunction devices using simple and. Zno films were deposited on indium tin oxide ito, which formed the transparent conductive layer tcl of a ganbased lightemitting diode led, by ultrasonic spraying pyrolysis to increase the light output power.
Growth and characterization of zno based semiconductor. Over 10 million scientific documents at your fingertips. Ganbased lightemitting diode with zno nanotexture layer. Freestanding gan substrates have been made by hydride vapor phase epitaxy hvpe, laser liftoff llo, and chemical mechanical polishing techniques. A high performance selfpowered ultraviolet photodetector based on. Nano express open access fabrication and properties of. Figure 1a shows that the reflection peaks of 100, 002, and 101 correspond to hexagonal zno with a wurtzite structure, but a preferred orientation along the. Highperformance ultraviolet lightemitting diodes using n. Based in the department of electronic and electrical engineering at the university of sheffield we are keen to share research insights, build successful partnerships and.
William bill nehrer, applied materials 2d1 low leakage mgcompensated gan schottky diodes on freestanding gan substrate for high energy. Pdf zno is an attractive material for applications in electronics, photonics. One promising way to enhance the ultraviolet luminescence efficiency is by incorporating plasmonic nanostructures. Aqueous epitaxial growth of zno on single crystalline au. The optical, dielectric or electric properties of bulk crystalline gan, zno, and zns, and nanostructured zno and zns were characterized by terahertz timedomain spectroscopy measurements. Review of ganzno hybrid structures based materials and devices. Ultraviolet lightemitting materials and devices with highefficiency are required for many applications. Piezotronic effect on zno nanowire film based temperature sensor. Zno, gan, atomic layer deposition, microbolometer, thin film transistor. A number of years ago, gan emerged as the leading material from which. It has a high thermal conductivity and a high mobility 41, 42. Ultraviolet electroluminescence from ordered zno nanorod. Effective ultraviolet lightemitting diodes leds were fabricated by clamping the nzno films on the top of phbnpgansapphire substrates. Nanoscale zno features are embedded in an elastomeric matrix function as tunable diffraction gratings, capable of sensing displacements with nanometre accuracy.
Structure, microstructure and physical properties of zno. The gan was subsequently directwaferbonded onto a glass substrate. Therefore, zno has turned into a new hot focus in the field of shortwavelength laser and. Cationmutation design of quaternary nitride semiconductors. Sic, gan, zno, ga2o3, and diamond, find many applications in microelectronics such as high electron mobility transistors hemt, field effect transistors, and lightemitting diodes led. Following an introduction, the authors look at the general properties of zno, as well as its growth, optical processes, doping and znobased dilute magnetic semiconductors. Novel method for reclaimreuse of bulk gan substrates using sacrificial zno release layers. In this paper, we present a nanowire based light emitting diode led consisting of a ptype gan thin film and an ntype zno vertical nanowire array. The primary role of piezotronic effect over geometrical and piezoresistive effect in the asfabricated devices has been. Springer series inmaterials science156 springer series inmaterials science editors.
Transferrable gan layers grown on znocoated graphene layers for optoelectronic devices kunook chung,1 chulho lee,1,2 gyuchul yi1 to whom correspondence should be addressed. Recent advances in zno materials and devices sciencedirect. Fabrication and properties of znogan heterostructure. Using the piezoelectric polarization charges created at the metalgan nanobelt nb interface under strain to modulate transport of local charge carriers across the schottky barrier, the piezotronic effect is utilized to convert mechanical stimuli applied on the wurtzitestructured gan nb into electronic controlling signals, based on which the gan nb straingated transistors sgts have been. However, a large energy mismatch between the plasmons and the light emitters greatly li. Gan and znobased materials and devices springer series.
Even though research focusing on zno goes back many decades, the renewed interest is fueled by availability of highquality substrates and reports of ptype. Gan and zno devices and materials deemed critical to both the gan and znobased. Epitaxial growth of zno nanowall networks on gansapphire. The alingan and zno materials systems have proven to be one of the.
Therefore, zno has turned into a new hot focus in the field of shortwavelength laser and optoelectronic devices in succession to gan in the past decade. Following an introduction, the authors look at the general properties of zno, as well as its growth, optical processes, doping and zno based dilute magnetic semiconductors. Pdf growth of gan on zno for solid state lighting applications. Proposed devices are believed to pave the way for the ganbased stable flexibletransparent electronics after further materials and process optimization.
Growth of gan on zno for solid state lighting applications. Zno are among the most favored materials for spintronic applications. The film was synthesized by the wet chemical deposition method and transferred to a flexible substrate using photoresist. Based in the department of electronic and electrical engineering at the university of sheffield we are keen to share research insights, build successful partnerships and strengthen links with industry and academia. Recently, the fabrication of ptype zno has made great progress by monodoping group v elements n, p, as, and sb and codoping iiiv elements with various technologies. Pdf challenges and opportunities in gan and zno devices and. Ganbased substrates and optoelectronic materials and devices. Gan material is considered as an excellent choice for efficient and durable device fabrication 4345. The alingan and zno materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in uvvisible optoelectronics and in highpowerhighfrequency microwave devices.
Morphology control and electroluminescence of zno nanorod. Gan and znobased materials and devices springer series in. Gan nanobeltbased straingated piezotronic logic devices. Therefore, a large number of semiconductor optoelectronic devices adopt.
Gan and znobased materials and devices qian sun, jung han auth. The research work presented in this dissertation is based on two direct and wide band gap semiconductors. The alingan and zno materials systems have proven to be one of the scientifically and technologically important areas of development over. Gan and znobased materials and devices pdf free download. Hybrid green leds based on znoingangan multiquantum. Gan based devices have promising prospects in military, satellite and commercial applications. Zinc oxide zno has been used in a wide range of products for many years, including, among others, varistors, surface acoustic wave devices and cosmetics. In order to solve the problems of gan heteroepitaxy on sapphire substrate, some techniques were explored. In this work, we demonstrated the first study of piezotronic effect as a potential means for measuring temperature by utilizing zno nanowire nw film.
The structure, surface morphology, composition, and optical properties of these thin films were investigated by xray diffraction, field emission scanning electron microscopy, infrared absorption. Novel method for reclaimreuse of bulk gan substrates using. Pdf zno and gan nanowire based type ii heterostructures. It is easy to obtain the high quality ntype zno material by doping groupiii. On the other hand, the synthesis of high quality zno nanorods is quite difficult due to the lack of lattice matched substrate materials.
The fabrication of white lightemitting diodes using the n. In particular, ultraviolet uv photodetectors based on a pn heterojunction. Arehart,1 and siddharth rajan1,3 1department of electrical and computer engineering, the ohio state university, columbus, ohio 43210, usa 2department of chemistry and biochemistry, the ohio state university, columbus, ohio 43210, usa. Zno nanowires have attracted a lot of attention due to their good charge carrier transport properties and high crystalline quality. This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of zno materials and devices. Gan for device applications owing to its relatively low. Znobased devices and applications deals with zno nanostructures nanowires, nanobelts, etc. A schematic view of a bent gan nanowire with the wurtzite structure and a hexagonal cross section.
Despite intense research efforts during the last years, the origin of the magnetic order is still under debate. On the photonics side, the algainn materials system, consisting of algan gan, inaln gan, and ingan gan heterostructures and the gan, aln, and inn binaries, is widely used in bluevioletwhiteuv light emitting diodes for stoplights and full color displays, blue and green lasers for use in highdensity cdrom storage and highresolution printers. Wafer bending and cracking in the hvpe growth were partly settled by pulsed flow modulation method. Proposed devices are believed to pave the way for the gan based stable flexibletransparent electronics after further materials and process optimization. Zno films were deposited on indium tin oxide ito, which formed the transparent conductive layer tcl of a gan based lightemitting diode led, by ultrasonic spraying pyrolysis to increase the light output power. Gan material is a chemically and mechanically stable. Epitaxial growth of zno nanowall networks on gansapphire substrates sangwoo kima and hyunkyu park school of advanced materials and system engineering, kumoh national institute of technology, gumi, gyeongbuk 730701, korea minsu yi department of materials science and engineering, sangju national university, sangju, gyeongbuk 742711, korea.
The commercial success of ganbased optoelectronic and electronic devices trig. Vertically wellaligned zno nanowires on cal2o3 and gan. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are. These devices and the microtectonic oxide thin film approach show promise in enabling functional, transparent, and wearable electronics. Such widebandgap semiconductor materials have shown promising applications in terahertz optoelectronics. Gan and znobased materials and devices springerlink. Ultravioletblue lightemitting diodes based on single. Highly ordered and vertically aligned zno nanorod arrays on the pgan substrates were achieved. In oxidebased materials and devices v 898719 proceedings of spie the international society for optical engineering. Jul, 20 in this study, ntype zno ptype gan and ntype zno nioptype gan based white lightemitting diodes are designed using two known morphologies of zno including nanorods and nanotubes. Zno thin film templates for ganbased devices article pdf available in proceedings of spie the international society for optical engineering 5732 march 2005 with 98 reads how we measure reads. This work provides a route for developing high performance optoelectronic devices based on zno nanorods.
Thin film epitaxy, defects and interfaces in gansapphire. Since mocvd is the dominant growth technology for ganbased materials and devices, there is a need to more. The integration of 2d, layered, pdoped semiconductors like mos 2 with wide band gap materials could provide an avenue towards achieving highperformance, bipolar devices that were otherwise unattainable due to the aforementioned obstacles. On the irst fpart of the dissertation, the synthesis of zno nanorod array via the low temperature solution growth method on flexible in 2o 3pet and rigid itoglass substrates were discussed. Zno along with gan has attracted intense attention in the search for hight c ferromagnetic diluted magnetic semiconductor dms materials, since dietls prediction that gan and zno based dms systems could exhibit ferromagnetism above room temperature upon doping with transition elements such as mn. Thin film epitaxy, defects and interfaces in gansapphire and. In addition, zno and gan are well suited materials because of the low lattice mismatch of about 1. Transferrable gan layers grown on znocoated graphene. The inhomogenities due to strain have been favorably used to increase efficiency of solid state light devices based on gan and zno.
Wurtzite polar crystal structure, algangan heterostructures, good electronic transport properties. Gan and znobased materials and devices qian sun, jung. The semiconductor zno has gained substantial interest in the research community in part because of its large exciton binding energy 60 mev which could lead to lasing action based on exciton recombination even above room temperature. In this paper, we present a nanowirebased light emitting diode led consisting of a ptype gan thin film and an ntype zno vertical nanowire array.
The zno nanotexture was formed by treating the asdeposited zno films with hydrogen. Review of ganzno hybrid structures based materials and. Structural property of znogan thin films figure 1a,b,c shows the xrd spectra of znosi, gansi, and znogansi films. The two wide band gap dilute magnetic semiconductors dms gd. On the irst fpart of the dissertation, the synthesis of zno nanorod array via the low temperature solution growth method on flexible. Transferrable gan layers grown on znocoated graphene layers. Improvement of electroluminescent performance of nznoalnp. Novel method for reclaimreuse of bulk gan substrates. Element analysis shows that the doping concentration of sb is. Morphology control and electroluminescence of zno nanorodgan. Mcculloch,2 sriram krishnamoorthy,1 yiying wu,2 aaron r.
Pdf this special issue addresses to a large extent the challenges and. Fabrication of zinc oxide nanorods based heterojunction devices. Improvement of electroluminescent performance of n. It is found that the zno nanorodbased leds exhibit a stronger uv emission of 390nm compared with the zno. Emergence of sic and gan materials for optoelectronic applications provides unique opportunity for advancement in power electronics gallium nitride. Zno and gan nanowire based type ii heterostructures. Chapter one introduction background of the research. Gan and znobased materials and devices stephen pearton. Fabrication and characterization of zno and gan devices. Gan was grown on znobuffered csapphire cal 2 o 3 substrates by metal organic vapor phase epitaxy. An understanding of the epitaxial growth mode and strain generation and relaxation processes in these systems is imperative to constructively exploit strain inhomogenities. Periodic boundary conditions are used along the axis of the nanowire. Novel znobased ternary oxides for optoelectronic applications. We develop cuttingedge technologies and perform advanced research on iiinitride materials and devices.
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